Details

Autor(en) / Beteiligte

• Karner, M.
• Rzepa, G.
• Baumgartner, O.
• Strof, G.
• Schanovsky, F.
• Mitterbauer, F.
• Kernstock, C.
• Karner, H.W.
• Stanojevic, Z.

Titel

Variability-Aware DTCO Flow: Projections to N3 FinFET and Nanosheet 6T SRAM

Ist Teil von

• 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.15-18

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Variability increases with downscaling, making it a vital component in the assessment of upcoming technologies. We use a variability-aware DTCO flow, which seamlessly integrates accurate TCAD simulations with industry-proven SPICE solutions. The impact of local variability sources on SRAM KPIs is analyzed for N3 FinFET and nanosheet technologies. Assuming typical process parameters, the geometrical variations due to LWR, STI recess, and epitaxial growth significantly affect the SRAM variability. However, the main contributor to variability for N3 technologies is MGG, highlighting the crucial role of metal grains size reduction for technology optimization.