Details

Autor(en) / Beteiligte

• Rusev, R.
• Angelov, G.
• Ruskova, I.
• Gieva, E.
• Nikolov, D.
• Spasova, M.
• Hristov, M.
• Radonov, R.

Titel

COMSOL Model of a Three-Gate Junctionless Transistor

Ist Teil von

• 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 2021, p.93-96

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I- V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11 %. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.