Details

Autor(en) / Beteiligte

• Song, Xubo
• Liang, Shixiong
• Lv, Yuanjie
• Zhang, Zhenpeng
• Zhang, Lisen
• Fu, Xingchang
• Guo, Yanmin
• Gu, Guodong
• Wang, Yuangang
• Fang, Yuan
• Bu, Aimin
• Cai, Shujun
• Feng, Zhihong

Titel

GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

Ist Teil von

• IEEE electron device letters, 2021-12, Vol.42 (12), p.1739-1742

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2021

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• This letter reports a frequency doubler based on GaN Schottky barrier diodes (SBDs) with high pulse output power. An improved chip configuration with six anodes distributed in two rows was utilized to improve the power-handling capacity. An accurate diode model was developed from DC and small-signal S-parameters from 0.5 to 110 GHz. The frequency doubler was designed with a balanced structure and assembled with a flip-chip configuration. When a GaN-based high-power amplifier was used to drive the doubler, it delivered a peak output power of 1006 mW at 216 GHz with a corresponding conversion efficiency of 15%. The GaN-based frequency doubler shows potential for use in high-power terahertz source applications.