Details

Autor(en) / Beteiligte

• Tang, Y.-T.
• Wu, T.-M.
• Fan, C.-L.
• Lai, Y.-M.
• Hsiang, K.-Y.
• Liao, C.-Y.
• Chang, S.-H.
• Yu, T.-Y.
• Su, P.
• Chang, M.-T.
• Huang, B.-H.
• Hu, C.
• Chang, S.-J.
• Chang, M.-F.
• Lee, M.-H.

Titel

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Ist Teil von

• 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.