Details

Autor(en) / Beteiligte

• Sehra, Khushwant
• Kumari, Vandana
• Gupta, Mridula
• Mishra, Meena
• Rawal, D. S.
• Saxena, Manoj

Titel

Degradation Mechanisms in a Proton Irradiated HEMT with 3DEG Conduction and 3DHG as a Back Barrier

Ist Teil von

• 2021 IEEE 21st International Conference on Nanotechnology (NANO), 2021, p.173-176

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This work evaluates the degradation mechanisms of the proton irradiated HEMTs incorporating graded AlGaN layers that support 3DEG for the conduction and 3DHG as a back barrier and subsequently evaluating it for dosimeter applications. The results presented demonstrate the deleterious effects of the proton fluence on the device's transfer characteristics in creating a bottleneck towards the flow of carriers in the 3DEG sheet. However, the trench gate arrangement with HfO 2 insulator controlling the bottleneck for the device operation remains intact even at a high proton fluence.