Details

Autor(en) / Beteiligte

• Suh, K.
• Lee, J. H.
• Shin, H. M.
• Lee, J. M.
• Lee, K. M.
• Hong, Y. J.
• Han, S. H.
• Kim, Y. J.
• Kim, C. K.
• Pyo, S.
• Jung, H. T.
• Ji, Y.
• Seo, B. I.
• Hwang, S. H.
• Kim, D. S.
• Kim, Y. H.
• Oh, S. C.
• Jeong, D. E.
• Nam, K. T.
• Kwon, B. S.
• Cho, M. K.
• Song, Y. J.
• Lee, K.
• Hong, Y. G.
• Jeong, G. T.

Titel

12.5 Mb/mm2 embedded MRAM for high density non-volatile RAM applications

Ist Teil von

• 2021 Symposium on VLSI Technology, 2021, p.1-2

Ort / Verlag

Japan Society of Applied Physics (JSAP)

Erscheinungsjahr

2021

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We demonstrate 28-nm embedded MRAM (eMRAM) macro for non-volatile RAM (nvRAM) applications, featuring macro density of 12.5 Mb/mm2, write speed < 100 ns, 10-yrs retention at 125 °C, and endurance > 1E9 cycles. This is the smallest 28-nm nvRAM-type eMRAM macro reported to date and provides ~2× area saving compared to SRAM while providing native non-volatility and low stand-by power.