Details

Autor(en) / Beteiligte

• Chen, Lisheng
• Chen, Lang
• Ge, Zeyu
• Meng, Fanyi
• Zhu, Xi

Titel

A W-band Power Amplifier with 15-dBm Psat and 14% PAE in 0.13-µm SiGe HBT Technology

Ist Teil von

• 2021 IEEE MTT-S International Wireless Symposium (IWS), 2021, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• In this work, the design of a wideband millimetre-wave (mm-Wave) power amplifier (PA) is presented. To ensure the designed PA has not only a sufficient output power with good power-added efficiency (PAE) but also superior input and output impedance matching, a balanced amplifier (BA) architecture is used. A prototype PA is designed in a 0.13-µm SiGe HBT technology. With a 1.6- V power supply, the PA can deliver more than 15 dBm saturated output power between 85-100 GHz that is equivalent to more than 16% fractional bandwidth. The peak PAE is better than 14.7% within this frequency range. The overall physical dimension of the designed PA is very compact. Including all pads, it is only 0.6 mm x 0.9 mm.