Details

Autor(en) / Beteiligte

• Han, S. H.
• Lee, J. H.
• Suh, K. S.
• Nam, K. T.
• Jeong, D. E.
• Oh, S. C.
• Hwang, S. H.
• Ji, Y.
• Lee, K.
• Song, Y. J.
• Hong, Y. G.
• Jeong, G. T.

Titel

Reliability of STT-MRAM for various embedded applications

Ist Teil von

• 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame buffer memory. However each application has different reliability challenges. In this paper, we discuss the reliability requirements for Flash-type and SRAM-type STT-MRAM, verifying superb reliability of highly tunable STT-MRAM technology.