Details

Autor(en) / Beteiligte

• Thant, Myo Min
• Phyo Kyaw, Than

Titel

Designing the 14GHz Balanced Inverse Class F Power Amplifier with GaN HEMT

Ist Teil von

• 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus), 2021, p.1941-1945

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper presents the high-efficiency balanced inverse class F power amplifier using GaN High Electron Mobility Transistor (HEMT). In the circuit design, used the microstrip line couplers for power dividing and combining. The power amplifier is designed to operate at 14 GHz. The power amplifier with microstrip branch-line coupler provides the power added efficiency (PAE) 63.2% and output power 28.6 dBm while second harmonics impedances tuning. The amplifier was designed by using Microwave Office (AWR) with the model (EEHEMT) for the transistor.