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71.5 GHz static and 84 GHz dynamic frequency dividers fabricated in 0.25 µm SiGe:C HBT technology with f T /f max 200 GHz are presented. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio compared with those of other technologies makes it attractive for high-frequency wireless communication systems. The regenerative dynamic divider consumes 220 mW with 5.5 V voltage supply.