Details

Autor(en) / Beteiligte

• Das, Ujjwal
• Theisen, Robert
• Hanket, Greg
• Upadhyaya, Ajay
• Rohatgi, Ajeet
• Hua, Amandee
• Weinhardt, Lothar
• Hauschild, Dirk
• Heske, Clemens

Titel

Sulfurization as a promising surface passivation approach for both n- and p-type Si

Ist Teil von

• 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, Vol.2020, p.1167-1170

Ort / Verlag

United States: IEEE

Erscheinungsjahr

2020

Link zum Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Sulfur is demonstrated to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25 ms are achieved for n- and p-type Si wafers, respectively, comparable to the industry standard thermal oxide and atomic layer deposited aluminum oxide passivation level. Surface characterization by x-ray photoelectron and emission spectroscopy reveals that sulfur is primarily bonded in a sulfide environment.