Details

Autor(en) / Beteiligte

• Banerjee, Soumendra Nath
• Biswas, Soumak
• Dutta, Rahul
• Ray, Sutapa
• Bishnu, Soham Kanti

Titel

Comparative Study of Different Semiconductor Devices and Their Temperature Dependence

Ist Teil von

• 2020 4th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2020, p.1-5

Ort / Verlag

IEEE

Erscheinungsjahr

2020

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper, the temperature dependence of current in a p-type and n- type semiconductor is studied using a low temperature shock experiment. The semiconductor devices used for the study are LED and two types of Bipolar Junction Transistor (BJT): NPN type and PNP type. The results for NPN and PNP type BJTs were analyzed. From the results it is observed that the current will increase more after sudden temperature drop than the gradual temperature reduction for all three semiconductor devices. Further, it is observed that, the emitter current difference is more in PNP transistor than the NPN transistor.