Details

Autor(en) / Beteiligte

• Barraud, S.
• Previtali, B.
• Vizioz, C.
• Hartmann, J. M.
• Sturm, J.
• Lassarre, J.
• Perrot, C.
• Rodriguez, Ph
• Loup, V.
• Magalhaes-Lucas, A.
• Kies, R.
• Romano, G.
• Casse, M.
• Bernier, N.
• Jannaud, A.
• Grenier, A.
• Andrieu, F.

Titel

7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

Ist Teil von

• 2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2020

Link zum Volltext

Quelle

IEL

Beschreibungen/Notizen

• In this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA) nanosheet transistors with a record number of stacked channels. Seven levels stacked nanosheet (NS) GAA transistors fabricated using a replacement metal gate process, inner spacer and self-aligned contacts show an excellent gate controllability with extremely high current drivability (3mA/μm at V DD =1V) and a 3× improvement in drain current over usual 2 levels stacked- NS GAA transistors.