Details

Autor(en) / Beteiligte

• Amoroso, Salvatore Maria
• Lee, Jaehyun
• Brown, Andrew R.
• Asenov, Plamen
• Lin, Xi-Wei
• Moroz, Victor
• Yang, Thomas

Titel

High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach

Ist Teil von

• 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.35-38

Ort / Verlag

The Japan Society of Applied Physics

Erscheinungsjahr

2020

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This paper presents a TCAD-to-SPICE high-sigma analysis of DRAM write and retention performance. Both statistical and process-induced variability are taken into- account. We highlight that the interplay between discrete traps and discrete dopants is ruling the leakage statistical tails and therefore can play a fundamental role in determining yield and reliability of ultra-scaled DRAMs.