IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278
2021
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- Autor(en) / Beteiligte
- Titel
- Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode
- Ist Teil von
- IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2021
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a thermally stable TiN anode. The current-voltage characteristics of the diode measured at various temperature present a zero-temperature coefficient (ZTC) bias point of approximately 0.6 V. At the voltage below the ZTC bias point (sub-threshold region), the forward voltage at a fixed current decreases linearly with the increasing temperature, resulting in a sensitivity of approximately 1.3 mV/K. In the reversely biased region, the leakage current also presents temperature-dependent behavior with a sensitivity of approximately 19.7 mA/K regardless of the bias. Those results can be interpreted by the thermionic emission model.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1530-437XeISSN: 1558-1748DOI: 10.1109/JSEN.2020.3018330Titel-ID: cdi_ieee_primary_9171851
- Format
- –
- Schlagworte
- Anodes, Bias, Current voltage characteristics, Gallium nitride, Gallium nitrides, GaN, Leakage current, Resistance, Schottky diodes, Sensitivity, Temperature, Temperature dependence, Temperature measurement, temperature sensor, Temperature sensors, Thermal stability, Thermionic emission, TiN, vertical diode