Details

Autor(en) / Beteiligte

• Moon, Jeong-Sun
• Wong, Joel
• Grabar, Bob
• Antcliffe, Mike
• Chen, Peter
• Arkun, Erdem
• Khalaf, Isaac
• Corrion, Andrea
• Chappell, James
• Venkatesan, Nivedhita
• Fay, Patrick

Titel

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Ist Teil von

• IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• We report scaled, graded-channel AlGaN/GaN HEMTs with an extrinsic f T and f MAX of 170 GHz and 363 GHz, which is the highest in emerging graded-channel GaN HEMTs. At 50-nm gate length, the f T *Lg of 8.5 GHz<inline-formula> <tex-math notation="LaTeX">\ast \mu \text{m} </tex-math></inline-formula> is comparable to that of conventional scaled AlGaN/GaN HEMTs fabricated together. At low DC power, the scaled graded-channel AlGaN/GaN HEMTs show a higher f MAX than the scaled AlGaN/GaN HEMT with the same gate length. The devices also exhibit a 2 dB improvement in gain at low DC bias, and the measured minimum noise figure was as low as 0.5 dB at 30 GHz. This is comparable to state-of-the-art device noise figure from a 20-nm gate length AlGaN/GaN HEMT. The combination of improved f T , f MAX , and minimum noise figure at low DC power for the graded-channel AlGaN/GaN HEMTs shows great promise for ultra-low-power, low-noise amplifiers.