Details

Autor(en) / Beteiligte

• Yuan, Hao
• Liu, Yancong
• He, Yanjing
• Hu, Yanfei
• Zhang, Tingsong
• Tang, Xiaoyan
• Song, Qingwen
• Zhang, Yimen
• Zhang, Yuming
• He, Xiaoning
• Qian, Qingyou
• Xiao, Li

Titel

Characteristic and Robustness of Trench Floating Limiting Rings for 4H-SiC Junction Barrier Schottky Rectifiers

Ist Teil von

• IEEE electron device letters, 2020-07, Vol.41 (7), p.1056-1059

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this letter, planar floating limiting rings (FLRs) and trench FLRs with different trench depths for the 4H-SiC junction barrier Schottky (JBS) rectifiers are analyzed and compared with simulations and experiments. Compared with the planar FLRs, the experimental results present that the first ring spacing window that termination efficiency exceeds 80% of the parallel plane breakdown voltage (BV) can be widened and termination area can be reduced at the same BV by adopting the trench FLRs. The simulations also indicate that there is an optimal trench depth for the trench FLRs and a smaller sidewall angle can achieve better device performance. Additionally, the repetitive avalanche current stress measurements imply that the trench FLRs has better robustness regarding the BV shift, achieving better device reliability.