Details

Autor(en) / Beteiligte

• Kim, Doo-Hyun
• Kim, Hyunggon
• Yun, Sungwon
• Song, Youngsun
• Kim, Jisu
• Joe, Sung-Min
• Kang, Kyung-Hwa
• Jang, Joonsuc
• Yoon, Hyun-Jun
• Lee, Kanabin
• Kim, Minseok
• Kwon, Joonsoo
• Jo, Jonghoo
• Park, Sehwan
• Park, Jiyoon
• Cho, Jisoo
• Park, Sohyun
• Kim, Garam
• Bang, Jinbae
• Kim, Heejin
• Park, Jongeun
• Lee, Deokwoo
• Lee, Seonyong
• Jang, Hwajun
• Lee, Han-Jun
• Shin, Donghyun
• Park, Jungmin
• Kim, Jungkwan
• Kim, Jongmin
• Jang, Kichang
• Park, II Han
• Moon, Seuna Hyun
• Choi, Myung-Hoon
• Kwak, Pansuk
• Park, Joo-Yona
• Choi, Youngdon
• Kim, Sang-Lok
• Lee, Seungjae
• Kang, Dongku
• Lim, Jeong-Don
• Byeon, Dae-Seok
• Song, Kiwhan
• Choi, Junghwan
• Hwang, Sang Joon
• Jeong, Jaeheon

Titel

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

Ist Teil von

• 2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.218-220

Ort / Verlag

IEEE

Erscheinungsjahr

2020

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• 3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]-[3]. Also storage market still requires more bits for diverse digital applications. [4]