Details

Autor(en) / Beteiligte

• Nguyen, Nguyen L. K.
• Nguyen, Duy P.
• Stameroff, Alexander N.
• Pham, Anh-Vu

Titel

A 1-160-GHz InP Distributed Amplifier Using 3-D Interdigital Capacitors

Ist Teil von

• IEEE microwave and wireless components letters, 2020-05, Vol.30 (5), p.492-495

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE

Beschreibungen/Notizen

• A wideband monolithic microwave/millimeter-wave integrated circuit (MMIC) distributed amplifier (DA) using a 3-D interdigital capacitor at the input of the gain cell is demonstrated in an indium phosphide (InP) heterojunction bipolar transistor (HBT) process. The proposed DA using interdigital capacitors improves the input return loss at high frequencies compared with the one implemented with conventional metal-insulator-metal (MIM) capacitors. The fabricated amplifier achieves a measured average gain of 10.5 dB over a 3-dB bandwidth from 1 to 160 GHz. The maximum measured saturated power (<inline-formula> <tex-math notation="LaTeX">P_{\mathrm {sat}} </tex-math></inline-formula>) is 17.8 dBm with the corresponding 1-dB compression power (<inline-formula> <tex-math notation="LaTeX">P_{\mathrm {1\,dB}} </tex-math></inline-formula>) of 15 dBm at 55 GHz. The amplifier achieves a minimum <inline-formula> <tex-math notation="LaTeX">P_{\mathrm {sat}} </tex-math></inline-formula> of 14.6 dBm up to 110 GHz.