Details

Autor(en) / Beteiligte

• Aslam, Muhammad Zubair
• Jeoti, Varun
• Karuppanan, Saravanan
• Chand, Ami

Titel

PZT Based Multilayer Surface Acoustic Wave Device for High Frequency Applications

Ist Teil von

• 2019 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2019, p.266-269

Ort / Verlag

IEEE

Erscheinungsjahr

2019

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper presents a study on the integration of PZT thin film on SiO 2 /Si substrate, which offers a great deal of potential in high frequency applications. A finite element method (FEM) simulation analysis of the proposed PZT/SiO 2 /Si multilayer surface acoustic wave device is performed, and two propagation modes are studied i.e. the Rayleigh and Sezawa wave mode. The proposed structure is optimized by PZT (t PZT ) and SiO 2 (t SiO2 ) layers thicknesses. The Rayleigh mode is optimized with k 2 =6.27% at t PZT /λ=0.4 and t SiO2 /λ=0.025 and the Sezawa mode with k 2 =13.13% at t PZT /λ =0.2 and t SiO2 /λ=0.025. The temperature coefficient of frequency of the Sezawa mode is 2.7 times lower than that of the Rayleigh mode. Which makes it a more suitable choice for temperature stable high frequency and high k 2 SAW devices.