Details

Autor(en) / Beteiligte

• Neumann, K.
• Kuehnel, L.
• Langer, F.
• Rennings, A.
• Benson, N.
• Schmechel, R.
• Erni, D.

Titel

Analysis of stochastic Schottky barrier variations within printed high frequency rectifiers for harmonics generation

Ist Teil von

• 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2019, p.169-171

Ort / Verlag

IEEE

Erscheinungsjahr

2019

Link zum Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper we investigate the stochastic Schottky barrier variations of printed distributed Schottky diodes consisting of a self-assembled arrangement of crystalline silicon microcones onto a metal layer. The microcone formation emerges from an inkjet printed Si nanoparticle film after laser sintering yielding a Schottky diode when a corresponding top metallization is applied. The elementary microcone diodes differ electrically in their barrier height, which is modelled as a gaussian distribution. The circuit simulation software Advanced Design System (ADS) is used to analyze the rectification abilities of the overall structure. The results show that a distributed barrier height leads to a smoother IV-characteristic, which can also be interpreted as an aggregated diode with a smaller turn on voltage. A Fourier analysis of the rectified time-domain signal shows an amplification of the frequency components up to the third harmonic in comparison to a non distributed single diode.