Details

Autor(en) / Beteiligte

• Agarwal, H.
• Gupta, C.
• Goel, R.
• Kushwaha, P.
• Lin, Y.-K.
• Kao, M.-Y.
• Duarte, J.-P.
• Chang, H.-L.
• Chauhan, Y. S.
• Salahuddin, S.
• Hu, C.

Titel

BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect

Ist Teil von

• IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4258-4263

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement.