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Change of Depth Profile for High-Temperature Implantation in Channeling Condition
Ist Teil von
2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.62-65
Ort / Verlag
IEEE
Erscheinungsjahr
2018
Quelle
IEEE Xplore
Beschreibungen/Notizen
To manufacture high-performance electronic devices, implant parameters with high accuracies are desired. In recent years, higher accuracy of an implant angle is strongly required, with progress in shrinking and sophistication of devices. On the other hand, in some cases, ion implantations at high or low temperatures are performed to control implant damages, which are inevitably induced by the implantations. It was found that depth profiles of ions implanted in channeling conditions significantly change when wafer temperatures increase. In the channeling conditions, not only the implant angles, but also the wafer temperatures influence the depth profiles. Control of both the depth profile and the implant damage are inseparable in the channeling conditions, and careful setting of both the implant angle and the wafer temperature is critical to device design.