Details

Autor(en) / Beteiligte

• Chung, Yun-Yan
• Li, Chi-Feng
• Lin, Chao-Ting
• Ho, Yen-Teng
• Chien, Chao-Hsin

Titel

Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Ist Teil von

• IEEE electron device letters, 2019-10, Vol.40 (10), p.1662-1665

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This study determined the top (vertical) and edge (horizontal) resistivities of metal-MoS 2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS 2 films on a sapphire substrate. The edge contact resistivity, <inline-formula> <tex-math notation="LaTeX">\rho _{C\_{}{\textit {edge}}} </tex-math></inline-formula>, was almost two orders of magnitude lower than the top contact resistivity, <inline-formula> <tex-math notation="LaTeX">\rho _{C\_{}{\textit {top}}} </tex-math></inline-formula>. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal-two-dimensional material contact.