Details

Autor(en) / Beteiligte

• Zhu, X.
• Liu, H.
• Munro, E.
• Rouse, J.

Titel

Simulation of electron and ion beam optics for high throughput lithography

Ist Teil von

• Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387), 2000, p.134-135

Ort / Verlag

IEEE

Erscheinungsjahr

2000

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Several electron and ion beam systems are currently being developed as possible candidates for high-throughput next generation lithography ("NGL"). These include projection electron beam columns such as PREVAIL and SCALPEL ion beam projection systems, multi-beam and multi-column systems. The design and optimization of such systems requires a sophisticated and accurate simulation of the optical performance, including an analysis of the aberrations, Coulomb interaction effects and tolerancing requirements. We have developed a comprehensive range of software tools to assist in this design process.