Details

Autor(en) / Beteiligte

• Ji, Y.
• Goo, H. J.
• Lim, J.
• Lee, S. B.
• Lee, S.
• Uemura, T.
• Park, J. C.
• Han, S. I.
• Shin, S. C.
• Lee, J. H.
• Song, Y. J.
• Lee, K. M.
• Shin, H. M.
• Hwang, S. H.
• Seo, B. Y.
• Lee, Y. K.
• Kim, J. C.
• Koh, G. H.
• Park, K. C.
• Pae, S.
• Jeong, G. T.
• Yoon, J. S.
• Jung, E. S.

Titel

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology

Ist Teil von

• 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2019

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of STT-MRAM with ECC off mode under various reliability stresses. We also show characterization of magnetic immunity for product design considerations. The STT-MRAM showed robustness against the FBC changes even after package level reliability stresses, magnetic stress and radiation stress. The negligible FBC changes with ECC off mode became to zero FBC with ECC on mode. This suggests that our intrinsic MRAM reliability is robust and also with design schemes like ECC, our STT-MRAM is ready for high volume production.