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The single-event transient (SET) response of silicon-on-insulator (SOI) tri-gate silicon nanowires is investigated using direct measurements of current transients. The impact of nanowire geometry is discussed using the major SET characteristics: duration, amplitude, and integrated value. The experimental results demonstrate the key influence of the nanowire width on the generated current transients induced by heavy ion irradiations. Both Monte-Carlo calculations of deposited energy and Technology Computer Aided Design (TCAD) simulations give evidence of the SOI tri-gate silicon nanowires ability to mitigate generated current transients. TCAD calculations are used to discuss the impact of the main nanowire geometrical parameters which include the nanowire width, thickness, and gate length, on transient charge collection mechanisms in SOI nanowire field-effect transistors (NWFET). Thin and narrow NWFET designs enhance the control of the surrounding gate over the electrostatic potential into the nanowire. The onset of floating body effects induced by heavy ion strike is reduced which mitigates the SET generation.