2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.505-508 vol.1
2000
Details
- Autor(en) / Beteiligte
- Titel
- 1-26 GHz high power p-i-n diode switch
- Ist Teil von
- 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.1, p.505-508 vol.1
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2000
- Link zum Volltext
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- Wideband high power GaAs p-i-n diode SPDT switch is presented. Insertion loss is less than 0.7 dB and isolation is better than -38 dB for 1-26 GHz frequency range. Maximum power handling capability is 35 dBm at 1.8 GHz where the bias voltage is -15 V. Composite buffer layer of superlattice and low temperature grown GaAs prevent the problems of power limitation related to epitaxial buffer layer of p-i-n diode structure.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 078035687X, 9780780356870ISSN: 0149-645XeISSN: 2576-7216DOI: 10.1109/MWSYM.2000.861093Titel-ID: cdi_ieee_primary_861093
- Format
- –
- Schlagworte
- Buffer layers, Frequency, Gallium arsenide, Insertion loss, P-i-n diodes, Superlattices, Switches, Temperature, Voltage, Wideband