2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018, p.1-1
2018
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Details
- Autor(en) / Beteiligte
- Titel
- Highly stable self-aligned coplanar a-IGZO TFTs under high temperature stress
- Ist Teil von
- 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018, p.1-1
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2018
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- We developed the high performance and stable, self-aligned (SA) coplanar amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT). The device performance is stable under positive bias temperature stress at 125 °C. The shift register made of the SA coplanar a-IGZO TFTs exhibit very stable performance at 125 °C.
- Sprache
- Englisch
- Identifikatoren
- DOI: 10.1109/CAD-TFT.2018.8608117Titel-ID: cdi_ieee_primary_8608117