Details

Autor(en) / Beteiligte

• Li, Yan-Lin
• Chang-Liao, Kuei-Shu
• Li, Chen-Chien
• Feng, Hao-Ting
• Kao, Chia-Hung
• Chen, Chun-Yuan
• Ruan, Dun-Bao
• Chen, Yi-Ju
• Li, Kai-Shin
• Luo, Guang-Li

Titel

Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel

Ist Teil von

• IEEE electron device letters, 2019-02, Vol.40 (2), p.181-184

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Although SiGe super-lattice (SL) buried channel was proposed to enhance carrier mobility in MOSFETs, its application on FinFETs is not reported yet. The electrical characteristics of nFinFETs with SiGe and SiGe SL-like buried channels were studied in this letter for the first time. The results show that the electron mobility of nFinFETs with SiGe buried channel is enhanced by an SL-like structure. A higher ON-state current and ON-state/ OFF-state current ratio are also achieved. However, the sub-threshold swing and reliability characteristics need improvement due to slight degradation of interface quality.