2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-3
2018
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Details
- Autor(en) / Beteiligte
- Titel
- Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs
- Ist Teil von
- 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-3
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2018
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- The influence of total ionizing dose (TID) irradiation on hot-carrier effect of short channel ultra-thin body and buried oxide Fully Depleted Silicon On Insulator (UTBB FD-SOI) n-MOSFETs is investigated. Experimental results show larger parameters degradation for irradiated devices, which is due to irradiation generated defects in buried oxide (BOX).
- Sprache
- Englisch
- Identifikatoren
- eISSN: 2154-0535DOI: 10.1109/NSREC.2018.8584318Titel-ID: cdi_ieee_primary_8584318
- Format
- –
- Schlagworte
- Degradation, Human computer interaction, Logic gates, Radiation effects, Silicon-on-insulator, Stress, Transistors