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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.1974-1978
Properties and Imaging of Thick Doped Amorphous Silicon in Direct Contact with Aluminum For Use in Silicon Heterojunction Solar Cells
Ist Teil von
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.1974-1978
Ort / Verlag
IEEE
Erscheinungsjahr
2018
Quelle
IEEE Electronic Library (IEL)
Beschreibungen/Notizen
We present the characterization of amorphous silicon/aluminum carrier-selective contacts in both front- and rear-emitter configurations, where the aluminum makes direct contact with the doped a-Si:H layers in silicon heterojunction solar cells. The resistance and passivation quality of these contacts have been measured using the transmission line measurement and the quasi-steady-state photoconductance techniques, respectively. The thickness of the doped a-Si:H layer in direct contact with the aluminum is 20 nm and post-aluminumsputtering annealing temperature ranges from 150-240 °C. Samples with aluminum on an a-Si:H(n) layer annealed at 180°C had a contact resistivity below 1 mΩcm 2 while the lifetime remained at 4.8 milliseconds- essentially unchanged from the pre-sputtered, passivated sample. These values are superior to those for the traditional silicon heterojunction contact with a transparent conductive oxide layer and can enable devices with low resistive losses and tremendous optical properties through the insertion of a low-refractive index dielectric material at a wellchosen contact fraction.