Details

Autor(en) / Beteiligte

• Bonen, S.
• Alakusu, U.
• Duan, Y.
• Gong, M. J.
• Dadash, M. S.
• Lucci, L.
• Daughton, D. R.
• Adam, G. C.
• Iordanescu, S.
• Pasteanu, M.
• Giangu, I.
• Jia, H.
• Gutierrez, L. E.
• Chen, W. T.
• Messaoudi, N.
• Harame, D.
• Muller, A.
• Mansour, R. R.
• Asbeck, P.
• Voinigescu, S. P.

Titel

Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

Ist Teil von

• IEEE electron device letters, 2019-01, Vol.40 (1), p.127-130

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEEE Explore

Beschreibungen/Notizen

• An approach is proposed to realize large-scale, "high-temperature" and high-fidelity quantum computing integrated circuits based on single- and multiple-coupled quantum-dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in a commercial CMOS technology. Measurements of minimum-size 6 nm <inline-formula> <tex-math notation="LaTeX">\times20 </tex-math></inline-formula> nm <inline-formula> <tex-math notation="LaTeX">\times80 </tex-math></inline-formula> nm Si-channel n-MOSFETs (electron-spin qubit), SiGe-channel p-MOSFETs (hole-spin qubit), and double quantum-dot complementary qubits reveal strong quantum effects in the subthreshold region at 2 K, characteristic of resonant tunneling in a quantum dot. S-parameter measurements of a transimpedance amplifier (TIA) for spin readout show an improved performance from 300 K to 2 K. Finally, the qubit-with-TIA circuit has 50-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> output impedance and 78-dB<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> transimpedance gain with a unity-gain bandwidth of 70 GHz and consumes 3.1 mW.