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Ultrafast terahertz modulator based on metamaterial-integrated WSe2 thin-films
Ist Teil von
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018, p.1-1
Ort / Verlag
IEEE
Erscheinungsjahr
2018
Quelle
IEEE Explore
Beschreibungen/Notizen
Semiconducting TMDs are promising candidates for THz optoelectronic devices with their ultrafast carrier dynamics and large modulation depths stemming from high photo-induced carrier concentration. In this work, we exploit the ultrafast carrier recombination in photoexcited WSe2 thin films for active THz modulation. The THz absorption was modelled as a sum of a free carrier Drude term and a Lorentzian oscillator for excitonic bound carriers. Based on this, we explore a THz modulator based on a metamaterial structure capacitively coupled to a CVD grown WSe2 film. While the THz absorption upon photoexcitation is strong close to the exciton resonance, the modulation response is limited by free carriers.