IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4868-4874
2018
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Details
- Autor(en) / Beteiligte
- Titel
- Effects of Parasitic Source/Drain Field Plates on Performances of Channel-Passivated Amorphous InGaZnO Thin-Film Transistors
- Ist Teil von
- IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4868-4874
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2018
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- This paper investigates the effects of parasitic source/drain (S/D) field plates (FPs) on electrical characteristics of channel-passivated amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). For the S/D metal of the channel-passivated TFT, besides acting as conducting electrodes, they can be FPs to influence the carrier conduction in the semiconductor layer via the channel passivation (CHP) layer. We first fabricated a standard channel-passivated a-IGZO TFT. Based on this TFT, performance variations caused by different lengths of the S/D FPs under different thicknesses of the CHP and a-IGZO layers are explored by technology computer-aided design simulation. Carrier concentration distributions and current flow patterns are examined to study the physical mechanisms of the corresponding performance degradation or improvement.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2018.2869676Titel-ID: cdi_ieee_primary_8476245
- Format
- –
- Schlagworte
- CAD, Carrier density, Cogeneration, Computer aided design, Computer simulation, Conduction, Current carriers, Electric variables, Electrical characteristic, Electrodes, field plate (FP), Gallium, Indium gallium zinc oxide, indium gallium zinc oxide (InGaZnO), Logic gates, Mathematical model, oxide semiconductor, Performance degradation, Performance evaluation, Semiconductor devices, Thin film transistors, thin-film transistor (TFT), Transistors, Zinc oxide