Details

Autor(en) / Beteiligte

• Lopez, Iria Garcia
• Rito, Pedro
• Petousi, Despoina
• Lischke, Stefan
• Knoll, Dieter
• Kroh, Marcel
• Zimmermann, Lars
• Ko, Minsu
• Ulusoy, A. Cagri
• Kissinger, Dietmar

Titel

Monolithically Integrated Si Photonics Transmitters in 0.25 um BiCMOS Platform for High-Speed Optical Communications

Ist Teil von

• 2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.1312-1315

Ort / Verlag

IEEE

Erscheinungsjahr

2018

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Monolithically integrated electro-optical transmitters fabricated in a 0.25 μm SiGe:C BiCMOS electronic-photonic integrated circuit (EPIC) technology with f T =190 GHz are presented. The modules are based on the co-design and integration of a segmented depletion-type Si Mach-Zehnder modulator and multichannel driver amplifiers. Two driving approaches and their performance trade-offs are discussed: a linear one, with direct interface to an external digital-to-analog converter (DAC), as well as a more power efficient implementation featuring integrated 4-bit DAC functionality. High extinction ratios at high speed are demonstrated, enabled by the high breakdown voltages of the HBT transistors. The modules support several modulation formats among which pulse-amplitude-modulation (PAM) −4 eye diagrams up to 37 GBd are shown, for the first time.