Details

Autor(en) / Beteiligte

• Borca-Tasciuc, T.
• Weili Liu
• Jianlin Liu
• Taofang Zeng
• Song, D.W.
• Moore, C.D.
• Gang Chen
• Wang, K.L.
• Goorsky, M.S.
• Radetic, T.
• Gronsky, R.
• Xiangzhong Sun
• Dresselhaus, M.S.

Titel

Thermal conductivity of Si/Ge superlattices

Ist Teil von

• Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), 1999, p.201-204

Ort / Verlag

IEEE

Erscheinungsjahr

1999

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.