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Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), 1999, p.201-204
Ort / Verlag
IEEE
Erscheinungsjahr
1999
Quelle
IEEE Electronic Library (IEL)
Beschreibungen/Notizen
We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.