Details

Autor(en) / Beteiligte

• Zhang, Xiao-Long
• Huang, A-Bao
• Tian, Cheng-Yi
• Wang, Yu
• Lou, Yi-Yi

Titel

Thermophotovoltaic Generation of Electricity With InAs0.91Sb0.09 Device

Ist Teil von

• IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4429-4433

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2018

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• We report the efficient low-temperature thermophotovoltaic energy conversion with an experimentally available InAs 0.91 Sb 0.09 device. It is shown that this device has a spectrum-insensitive optimum doping profile, <inline-formula> <tex-math notation="LaTeX">N_{\textsf {d}{(}\textsf {a}{)}} = \textsf {10}^{\textsf {18(17)}}~\text{cm}^{-3} </tex-math></inline-formula> . With this optimum doping profile, it is further shown that for spectrum temperature lower than 1400 K, InAs 0.91 Sb 0.09 device shows thermal conversion efficiency superior to any reported GaInAsSb devices under the same spectrum illumination. For spectrum temperature ranging from 800 to 1400 K, device efficiency in the range of 8%-16% is promised for InAs 0.91 Sb 0.09 device.