Details

Autor(en) / Beteiligte

• Goto, Tetsuya
• Saito, Kaori
• Imaizumi, Fuminobu
• Hatanaka, Makoto
• Takimoto, Masami
• Mizumura, Michinobu
• Gotoh, Jun
• Ikenoue, Hiroshi
• Sugawa, Shigetoshi

Titel

LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Ist Teil von

• IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3250-3256

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2018

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this paper, this new system was applied to fabricate poly-Si TFTs, using two laser exposure methods such as the static exposure and the scan exposure. Grain size increased as the laser energy density increased, and TFTs with the field-effect mobility larger than 100 cm 2 V −1 s −1 with the ON- OFF ratio of drain current of approximately 10 6 could be obtained. Furthermore, for the scan exposure, periodic grain structure was observed resulting from the lateral solidification. In this condition, variations of electrical properties of TFT could be reduced compared to the case of the static exposure.