Details

Autor(en) / Beteiligte

• Navarro, Gabriele
• Bourgeois, Guillaume
• Kluge, Julia
• Serra, Anna Lisa
• Verdy, Anthonin
• Garrione, Julien
• Cyrille, Marie-Claire
• Bernier, Nicolas
• Jannaud, Audrey
• Sabbione, Chiara
• Bernard, Mathieu
• Nolot, Emmanuel
• Fillot, Frederic
• Noe, Pierre
• Fellouh, Leila
• Rodriguez, Guillaume
• Beugin, Virginie
• Cueto, Olga
• Castellani, Niccole
• Coignus, Jean
• Delaye, Vincent
• Socquet-Clerc, Carole
• Magis, Thomas
• Boixaderas, Christelle
• Barnola, Sebastien
• Nowak, Etienne

Titel

Phase-Change Memory: Performance, Roles and Challenges

Ist Teil von

• 2018 IEEE International Memory Workshop (IMW), 2018, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2018

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper we analyze recent progress in Phase- Change Memory (PCM) technology targeting both Storage Class Memory and embedded applications. The challenge to achieve a high temperature data retention without compromising the device programming speed can be addressed by material engineering. We show that volume and thermal confinement improvement of the phase-change material enables a high (10-fold) reduction of the programming current, achieved also by the optimization of the device architecture, in particular in the case of a confined structure. It leads to a higher cell efficiency proven by a 6x reduction of the programming current density wrt a standard PCM structure. Furthermore, we demonstrate the reduction of thermal losses by the tuning of the thermal conductivity of the dielectrics surrounding the phase-change material. Finally, we propose some considerations about the PCM ultimate scaling and the reliability at such dimensions, showing that the engineering of the bottom electrode/phase-change material interface can lead to a reduced variability in scaled devices.