Details

Autor(en) / Beteiligte

• Wong, C.S.
• Dai, G.M.
• Tsang, H.K.

Titel

Photoconductive detection of millimetre waves using proton bombarded GaAs

Ist Teil von

• Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458), 1999, p.14-17

Ort / Verlag

IEEE

Erscheinungsjahr

1999

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.