Details

Autor(en) / Beteiligte

• Lee, Ming-Yi
• Chang, T.-Y.
• Hsueh, W.-F.
• Kuo, L.-K.
• Lin, D.-J.
• Chao, Y.-H.
• Tzeng, U. J.
• Lu, C.-Y.

Titel

Electrical method to localize the high-resistance of nanoscale CoSi2 word-line for OTP memories

Ist Teil von

• 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.6B.3-1-6B.3-6

Ort / Verlag

IEEE

Erscheinungsjahr

2018

Quelle

IEL

Beschreibungen/Notizen

• The defective high-resistance in a nanoscale cobalt silicide (CoSi2) word-line (WL) was observed for a high density of non-volatile memory. An electrical method through analyzing the variation of threshold voltage of memory cells with its physical position is proposed to help the localization of defect position, identify the root cause of CoSi2agglomeration, and also provide a method to detect this kind of defective WL.