Details

Autor(en) / Beteiligte

• Reusch, David
• Glaser, John

Titel

Design considerations for GaN transistor based synchronous rectification

Ist Teil von

• 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2018, p.886-893

Ort / Verlag

IEEE

Erscheinungsjahr

2018

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• With improved electrical characteristics, GaN transistors have demonstrated superior performance in numerous hard-switching, soft-switching, and resonant power applications. In this paper, we will focus on the evaluation of GaN transistors as synchronous rectifiers and discuss design considerations unique for low voltage (<100 V), high frequency GaN transistor based synchronous rectification applications. Two experimental prototypes, operating from V in =48 V to V out =12 V and f sw =300-1000 kHz and V in =12 V to V out =1.8 V at f sw =10 MHz are used for evaluation.