Details

Autor(en) / Beteiligte

• Lee, Seungjae
• Kim, Chulbum
• Kim, Minsu
• Joe, Sung-min
• Jang, Joonsuc
• Kim, Seungbum
• Lee, Kangbin
• Kim, Jisu
• Park, Jiyoon
• Lee, Han-Jun
• Kim, Minseok
• Lee, Seonyong
• Lee, SeonGeon
• Bang, Jinbae
• Shin, Dongjin
• Jang, Hwajun
• Lee, Deokwoo
• Kim, Nahyun
• Jo, Jonghoo
• Park, Jonghoon
• Park, Sohyun
• Rho, Youngsik
• Park, Yongha
• Kim, Ho-joon
• Lee, Cheon An
• Yu, Chungho
• Min, Youngsun
• Kim, Moosung
• Kim, Kyungmin
• Moon, Seunghyun
• Kim, Hyunjin
• Choi, Youngdon
• Ryu, YoungHwan
• Choi, Jinwon
• Lee, Minyeong
• Kim, Jungkwan
• Choo, Gyo Soo
• Lim, Jeong-Don
• Byeon, Dae-Seok
• Song, Kiwhan
• Park, Ki-Tae
• Kyung, Kye-hyun

Titel

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

Ist Teil von

• 2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.340-342

Ort / Verlag

IEEE

Erscheinungsjahr

2018

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density increases of more than 50% per year due to the aggressive development of 3D-wordline-stacking technology. This trend has been consistent for the last three consecutive years [2-4], however the storage market still requires higher density for diverse digital applications. A 4b/cell technology is one promising solution to increase bit density [5]. In this paper, we propose a 4b/cell 3D NAND Flash memory with a 12MB/s program throughput. The chip achieves a 5.63Gb/mm 2 areal density, which is a 41.5% improvement as compared to a 3b/cell NAND Flash memory in the same 3D-NAND technology [4].