Details

Autor(en) / Beteiligte

• Wei Chen
• Zhuo Deng
• Daqian Guo
• Yaojiang Chen
• Mazur, Yuriy I.
• Maidaniuk, Yurii
• Benamara, Mourad
• Salamo, Gregory J.
• Huiyun Liu
• Jiang Wu
• Baile Chen

Titel

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Ist Teil von

• Journal of lightwave technology, 2018-07, Vol.36 (13), p.2572-2581

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2018

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 × 10 -3 mA/cm 2 was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 μm at 77 K, and the corresponding detectivity was 5.78 × 10 8 cm·Hz 1/2 /W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.