Details

Autor(en) / Beteiligte

• Xubo Song
• Cui Yu
• Zezhao He
• Qingbin Liu
• Tingting Han
• Shaobo Dun
• Yuanjie Lv
• Shujun Cai
• Zhihong Feng

Titel

Design and realization of a X-band graphene amplifier MMIC

Ist Teil von

• 2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.694-697

Ort / Verlag

IEEE

Erscheinungsjahr

2017

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this work, we present a graphene amplifier Monolithic Microwave Integrated Circuit (MMIC) operating at X-Band. The graphene field effect transistor (FET) was fabricated on quasi-free-standing bilayer epitaxial graphene on SiC (0001) substrate by a self-aligned fabrication procedure. The small-signal equivalent circuit model of 2× 15 μm graphene FET with 200 nm T-gates was deduced from the measured small-signal S-parameters. The modeled S-parameters show good agreement with experiments from 1 GHz to 20 GHz. Based on the model, the X-band amplifier MMIC was designed and fabricated with independent bias component and impedance matching network composing of inductance and transmission line. A small-signal gain of 2.6 dB and a noise figure of 6.1 dB were achieved in the fabricated amplifier.