Details

Autor(en) / Beteiligte

• Helen, Y.
• Dassow, R.
• Mourgues, K.
• Bonnaud, O.
• Mohammed-Brahim, T.
• Raoult, F.
• Koehler, J.R.
• Werner, J.H.
• Lemoine, D.

Titel

Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization

Ist Teil von

• International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.297-300

Ort / Verlag

IEEE

Erscheinungsjahr

1999

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• We fabricated low temperature TFTs on low-cost glass substrates for large area electronic applications. A newly developed crystallization method uses a pulsed diode pumped Nd:YVO/sub 4/ laser. The high repetition capability of up to 100 kHz of this laser results in high throughput rates associated with a scanning speed of up to 5 cm/s. One of the remarkable features-of the TFTs is a field effect mobility mean value of 350 cm/sup 2//Vs with a standard deviation of 5%.