Details

Autor(en) / Beteiligte

• Leuther, Arnulf
• Ohlrogge, Matthias
• Czornomaz, Lukas
• Merkle, Thomas
• Bernhardt, Frank
• Tessmann, Axel

Titel

A 250 GHz millimeter wave amplifier MMIC based on 30 nm metamorphic InGaAs MOSFET technology

Ist Teil von

• 2017 12th European Microwave Integrated Circuits Conference (EuMIC), 2017, p.130-133

Ort / Verlag

European Microwave Association

Erscheinungsjahr

2017

Link zum Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A 30 nm gate length InGaAs channel MOSFET MMIC technology is presented. 100 mm semi-insulating GaAs substrates with a metamorphicaly grown InGaAs/InAlAs device heterostructure are used. Al 2 O 3 is deposited as gate dielectric onto the In 08 Ga 02 As channel by atomic layer deposition. The gate layout was optimized for monolithic microwave integrated circuit (MMIC) applications using T-gates and wet chemical recess etching to minimize the parasitic gate capacitances. For a 2 × 20 μm gate width transistor a transit frequency f T of 306 GHz and a maximum oscillation frequency f max of 381 GHz was extrapolated, respectively. This technology was employed for the fabrication of a 230-275 GHz amplifier MMIC with 4 cascode stages achieving a small signal gain of 12 dB at 250 GHz. To the best of the authors knowledge, this is the first reported InGaAs MOSFET millimeter-wave amplifier MMIC operated in the frequency regime beyond W-band.