Details

Autor(en) / Beteiligte

• Boxue Hu
• Zhuo Wei
• He Li
• Xingtong Lyu
• Diang Xing
• Risha Na
• Jin Wang

Titel

Characterization and evaluation of 4.5 kV 40 A SiC super-cascode device

Ist Teil von

• 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017, p.321-326

Ort / Verlag

IEEE

Erscheinungsjahr

2017

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device which consists of five 1.2 kV SiC normally-on JFETs and one 20 V Silicon (Si) MOSFET in series connection. Extensive static and dynamic characterization tests were performed on the device at various test conditions. The device static characteristics, including leakage current, gate threshold voltage, I-V characteristics, and C-V characteristics, were recorded at different temperatures. The device dynamic evaluation was done using a double pulse test (DPT) circuit with an inductive load. The DPT dc bus voltage was up to 3 kV and the load current was varied from 5 A to 40 A. The device switching speed and switching energy loss at different load currents were measured. The device test results showcase its potential in medium and high voltage applications.