Details

Autor(en) / Beteiligte

• Luo, Haoze
• Li, Wuhua
• Iannuzzo, Francesco
• He, Xiangning
• Blaabjerg, Frede

Titel

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Ist Teil von

• IEEE transactions on industrial electronics (1982), 2018-06, Vol.65 (6), p.4724-4738

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2018

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• This paper proposes the adoption of the inherent emitter stray inductance <inline-formula><tex-math notation="LaTeX"> L_{{\rm{eE}}}</tex-math></inline-formula> in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.